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Spatiospectral and picosecond spatiotemporal properties of a broad area operating channeled-substrate-planar laser array.
Yu N, Defreez RK, Bossert DJ, Wilson GA, Elliott RA, Wang SS, Winful HG. Yu N, et al. Appl Opt. 1991 Jun 20;30(18):2503-13. doi: 10.1364/AO.30.002503. Appl Opt. 1991. PMID: 20700238
Spatiospectral and spatiotemporal properties of an eight-element channeled-substrate-planar laser array are investigated in both cw and pulsed operating conditions. ...The spatiotemporal evolution of the near and far field exhibits complex dynamic beha …
Spatiospectral and spatiotemporal properties of an eight-element channeled-substrate-planar laser array are inve …
Channeled-substrate-planar structure Al(x)Ga(1-x) As lasers: an analytical waveguide study.
Kuroda T, Nakamura M, Aiki K, Umeda J. Kuroda T, et al. Appl Opt. 1978 Oct 15;17(20):3264-7. doi: 10.1364/AO.17.003264. Appl Opt. 1978. PMID: 20203959
The waveguide mechanism in channeled-substrate-planar (CSP) structure (AlGa) As lasers is analyzed. ...Observed light output vs current characteristics and mode patterns in the lasers justify the theoretical model....
The waveguide mechanism in channeled-substrate-planar (CSP) structure (AlGa) As lasers is analyzed. ...Observed …
Simple method for measuring the linewidth enhancement factor of semiconductor lasers by optical injection locking.
Iiyama K, Hayashi K, Ida Y. Iiyama K, et al. Opt Lett. 1992 Aug 15;17(16):1128-30. doi: 10.1364/ol.17.001128. Opt Lett. 1992. PMID: 19794740
A simple method for measuring the linewidth enhancement factor alpha of a semiconductor laser by optical injection locking is described. Without knowledge of the absolute values of detuning and the optical injection level, the value of alpha is evaluated from only changes …
A simple method for measuring the linewidth enhancement factor alpha of a semiconductor laser by optical injection locking is describ …
Transverse-mode stabilized Ga(1-x)Al(x)As visible diode lasers.
Kajimura T, Kuroda T, Yamashita S, Nakamura M, Umeda J. Kajimura T, et al. Appl Opt. 1979 Jun 1;18(11):1812-5. doi: 10.1364/AO.18.001812. Appl Opt. 1979. PMID: 20212554
Transverse-mode stabilized visible diode lasers in the 0.7-microm wavelength region are fabricated by growing a Ga(1-x)Al(x)As double heterostructure on a grooved GaAs substrate (channeled-substrate-planar structure). The diodes operate stably i …
Transverse-mode stabilized visible diode lasers in the 0.7-microm wavelength region are fabricated by growing a Ga(1-x)Al(x)As double …
Integration of a macro/micro architectured compartmentalised neuronal culture device using a rapid prototyping moulding process.
Arundell M, Perry VH, Newman TA. Arundell M, et al. Lab Chip. 2011 Sep 7;11(17):3001-5. doi: 10.1039/c1lc20120d. Epub 2011 Jul 20. Lab Chip. 2011. PMID: 21776485
A simple moulding technique to produce these devices results in a barrier of 560 mum where the 3 mum deep by 8 mum wide channels can be reversibly fabricated in either the glass base or PDMS compartmentalised mould depending on the type of application required. Using glass sub …
A simple moulding technique to produce these devices results in a barrier of 560 mum where the 3 mum deep by 8 mum wide channels can be reve …